Zurab Kushitashvili

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Location: Georgia
Work interests: research interests include the technology receiving nanoscale metal oxides, semiconductors, GaN, AlN, InGaN, photovoltaic systems, solar cells and memory storage devices.
Affiliation/website: Micro and Nanoelectronics Institute
Preferred contact method: Reply to post in blog/forum/group
Preferred contact language(s): English
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Favourite publications: Properties of Hafnium Oxide Received by Ultra Violet Stimulated Plasma Anodizing (IEEE TDMR), Low Temperature Oxidation of GaAs by UV Stimulated Plasma Anodizing (WMESS 2016), C-V Measurement of HfO2 Dielectric Layerss (WMESS2016)

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I  was born on October 1, 1979 in Rustavi, Georgia. I have  received Master degree in Physics, specialty Microelectronic systems and Devices from Ivane Javakhishvili Tbilisi State University, Georgia, in 2003. I am currently

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