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Founding Member
Location: Swansea, Wales, United Kingdom
Work: Numerical simulation (Monte Carlo) of the nanotransistors and modelling, quantum confinement, photonic cryatsl, and Photovoltaic solar cell devices etc
Biographical: Past Research and Achievements: Completed my B. Sc. (Honours) in applied physics (Electronics & Electrical Engineering) with semiconductor electronics. Completed M. Sc. in Solid State Physics and Electronics. Course 1 Completed an experimental training course on photoluminescence and lifetime measurements to measure the number/concentration of optically active erbium ions in the samples (erbium- implanted silicon) under consideration. Supervisor: Prof. DI. Dr. Kurt Hingerl, Institute: Institute of Solid State and Semiconductor Physics at Johannes Kepler University, Linz, Austria. Course 2 Completed an experimental training course on X-ray reflectivity in samples of SiGe/Si and Si/SiO2/Si using an X-ray diffractometer. Supervisor: Prof. DI. Dr. Kurt Hingerl; Co-supervisor: Dr. Julian Stangl Institute: Institute of Solid State and Semiconductor Physics at Johannes Kepler University, Linz, Austria. Diploma Title: Erbium in Silicon Influence of Hydrogenation and Waveguiding. Awarded academic degree: Diplom-Ingenieur During my Diplom-Ingenieur (DI) in technical physics, I carried out experimental work on silicon devices for photoluminescence measurements of erbium with oxygen and hydrogen being used as activation agents. Supervisor: Prof. DI. Dr. Kurt Hingerl. Institute: Institute of Solid State and Semiconductor Physics at Johannes Kepler University, Linz, Austria. Industrial Experience 1 Company: R & D (Organic photodetectors), Nanoident Technologies AG, Austria As a semiconductor physicist at Nanoident, I worked both in clean room and laboratory, on the preparation of heterojunction solar cell photovoltaic devices, using polymer, organic and inorganic semiconductor nanomaterials. I have experience in the measurement of I-V characteristics (for photodiode, laser emitting diode, photovoltaic device, etc), absorption and photocurrent of the solar cell photovoltaic devices. I have had a great deal of experience with total lithography systems (dip coating and spin coating), manufactured from different sizes of micro/nanostructures (10 - 50 µm) in the presence of UV/VIS light. I’ve also worked on AFM (Atomic Force Microscopy), chemical etching and resist stripping. Thickness and surface contrast measurements were carried out on photoresists of prepared devices using profiler, microscope & Dek-Tak instrument. Industrial Experience 2 Company: Gunytronic, Austria As a research technician at Gunytronic, my responsibilities and activities were materials research, simulation development (Matlab), sensor test and data evaluation (Sinteranlage, Siemens -VAI). Application of high voltage to a gas-encapsulated emitter (such as Al, Au, Ag, etc) produces ionization on the top surface of the emitter, called corona discharge. Doctorate Title: Monte Carlo Device Modeling of Electron Transport in Nanoscale Transistors (Si and III-V material) Institute: College of Engineering, Swansea University, UK During my Ph.D (Electronics and Electrical Engineering), I was involved with code development (finite element), running numerical simulations and data analysis for semiconductor devices/materials. I completed my research project on 09July2012. The aim of my PhD project (funded by EPSRC) was to develop adequate models and corresponding Monte Carlo (MC) device simulation tools, capable of accurately predicting the performance of novel UTB1 CMOS2 with Si, SiGe, InGaAs and other compound semiconductor channels, high-κ gate stacks and metal gates. To analyse the electron transport, I-V characteristics and device behavior by scaling of 25 nm gate length n-type Si and InGaAs MOSFETs, is carried out ensemble MC device simulations. I have 4 publications in recognized journals (enclosed in my CV).
Favourite Publications: IEEE nanotransaction, nanoletters, solid state electronics, semiconductor science technology
Work: Numerical simulation (Monte Carlo) of the nanotransistors and modelling, quantum confinement, photonic cryatsl, and Photovoltaic solar cell devices etc
Biographical: Past Research and Achievements: Completed my B. Sc. (Honours) in applied physics (Electronics & Electrical Engineering) with semiconductor electronics. Completed M. Sc. in Solid State Physics and Electronics. Course 1 Completed an experimental training course on photoluminescence and lifetime measurements to measure the number/concentration of optically active erbium ions in the samples (erbium- implanted silicon) under consideration. Supervisor: Prof. DI. Dr. Kurt Hingerl, Institute: Institute of Solid State and Semiconductor Physics at Johannes Kepler University, Linz, Austria. Course 2 Completed an experimental training course on X-ray reflectivity in samples of SiGe/Si and Si/SiO2/Si using an X-ray diffractometer. Supervisor: Prof. DI. Dr. Kurt Hingerl; Co-supervisor: Dr. Julian Stangl Institute: Institute of Solid State and Semiconductor Physics at Johannes Kepler University, Linz, Austria. Diploma Title: Erbium in Silicon Influence of Hydrogenation and Waveguiding. Awarded academic degree: Diplom-Ingenieur During my Diplom-Ingenieur (DI) in technical physics, I carried out experimental work on silicon devices for photoluminescence measurements of erbium with oxygen and hydrogen being used as activation agents. Supervisor: Prof. DI. Dr. Kurt Hingerl. Institute: Institute of Solid State and Semiconductor Physics at Johannes Kepler University, Linz, Austria. Industrial Experience 1 Company: R & D (Organic photodetectors), Nanoident Technologies AG, Austria As a semiconductor physicist at Nanoident, I worked both in clean room and laboratory, on the preparation of heterojunction solar cell photovoltaic devices, using polymer, organic and inorganic semiconductor nanomaterials. I have experience in the measurement of I-V characteristics (for photodiode, laser emitting diode, photovoltaic device, etc), absorption and photocurrent of the solar cell photovoltaic devices. I have had a great deal of experience with total lithography systems (dip coating and spin coating), manufactured from different sizes of micro/nanostructures (10 - 50 µm) in the presence of UV/VIS light. I’ve also worked on AFM (Atomic Force Microscopy), chemical etching and resist stripping. Thickness and surface contrast measurements were carried out on photoresists of prepared devices using profiler, microscope & Dek-Tak instrument. Industrial Experience 2 Company: Gunytronic, Austria As a research technician at Gunytronic, my responsibilities and activities were materials research, simulation development (Matlab), sensor test and data evaluation (Sinteranlage, Siemens -VAI). Application of high voltage to a gas-encapsulated emitter (such as Al, Au, Ag, etc) produces ionization on the top surface of the emitter, called corona discharge. Doctorate Title: Monte Carlo Device Modeling of Electron Transport in Nanoscale Transistors (Si and III-V material) Institute: College of Engineering, Swansea University, UK During my Ph.D (Electronics and Electrical Engineering), I was involved with code development (finite element), running numerical simulations and data analysis for semiconductor devices/materials. I completed my research project on 09July2012. The aim of my PhD project (funded by EPSRC) was to develop adequate models and corresponding Monte Carlo (MC) device simulation tools, capable of accurately predicting the performance of novel UTB1 CMOS2 with Si, SiGe, InGaAs and other compound semiconductor channels, high-κ gate stacks and metal gates. To analyse the electron transport, I-V characteristics and device behavior by scaling of 25 nm gate length n-type Si and InGaAs MOSFETs, is carried out ensemble MC device simulations. I have 4 publications in recognized journals (enclosed in my CV).
Favourite Publications: IEEE nanotransaction, nanoletters, solid state electronics, semiconductor science technology
