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Work: WGM laser
Biographical: Dr. Sherstnev Victor was born in 1953, married, has two children. Mobile phone: (+7) 9213929047 Fax: (+7) 812 - 297-1017 1977 Master Degree from the Krasnoyarsk Polytechnic Institute (the Radio-Technical department) on the design and technology of radioelectronic devices. 1990 Candidate in Physical and Mathematical Sciences Ioffe institute, 1990-1993 Junior researchers Researcher, Ioffe Physical-Technical institute RAS, Laboratory of Electronical Semiconductors, 26 Polytekhnicheskaya str., St.Petersburg, 194021, Russia. 1994-1995 Research Fellow, Physics Department, Montpellier , France 1997-1998 Senior researcher, Ioffe institute 1998-1998 Research , Physics Department, Lancaster University, UK 1998-1999 Senior researcher, Ioffe 1999-1999 Research , Physics Department, UK, 1999-2000 Senior researcher, Ioffe 2000-2003 Research, UK 2003-now Senior researcher, Ioffe GRANTS AND AWARDS: Victor Sherstnev joined the Department of Radio-Technical of Krasnoyarsk Polytechnic Institute (Krasnoyarsk Polytechnic Institute) in 1972 and graduated from Radio-Technical on the design and technology of radioelectronic devices of that department in 1977. He has worked at the different research positions. Dr. V. Sherstnev has published more than 120 journal papers and more than 96 conference proceedings on the studying mentioned below. Hi is an author of 2 patents. His latest research interest is the investigation of the optoelectronic devices for gas analysis. His current fields of interest are • physics and technology (LPE, MBE, MOCVD) of narrow gap III-V semiconductor heterostructures, especially nanoheterostructures (quantum wells, quantum wires, quantum dots); • physics of crystal growth of ultra-thin layers, defects in semiconductors, and semiconductor structures; • theory of electrical, optical and quantum coherent phenomena in semiconductors; • ultrafast processes and non-linear optical phenomena semiconductor laser diodes (CW, DFB), photodetectors, power semiconductor devices; • physics of power semiconductors devices (radiative recombination and non-radiative Auger recombination), • laser physics and electro-optic devices Dr. Sherstnev has essential working experience in various areas of experimental physics ranging from invention of new optoelectronic devices to realization them. • 1987 The phenomenon of the conductivity type changing for A3B5 without doping was discovered (changing the p-type conductivity to n-type). For the example of GaSb the phenomenon was demonstrated. (Have the patent). • 1992 Single frequency IR semiconductor lasers were proposed and fabricated. The fabricated lasers tuned up to the lasing mode width. In 1999 – the world record of tuning of the laser mode of single frequency semiconductor lasers was achieved up to100 А. • 1999 Proposed and fabricated of the novel class IRWGM semiconductor lasers, witch has both scientific and application importance. IRWGM semiconductor lasers open a new road for R&D. • 2003 Proposed and fabricated of the novel class Mid-Infrared lasers induced by noise. Being scientifically flexible and looking forward to new challenges Dr. Sherstnev would be willing to get engaged in other projects that appear to be interesting and potentially fruitful.
Favourite Publications: APL
Work: WGM laser
Biographical: Dr. Sherstnev Victor was born in 1953, married, has two children. Mobile phone: (+7) 9213929047 Fax: (+7) 812 - 297-1017 1977 Master Degree from the Krasnoyarsk Polytechnic Institute (the Radio-Technical department) on the design and technology of radioelectronic devices. 1990 Candidate in Physical and Mathematical Sciences Ioffe institute, 1990-1993 Junior researchers Researcher, Ioffe Physical-Technical institute RAS, Laboratory of Electronical Semiconductors, 26 Polytekhnicheskaya str., St.Petersburg, 194021, Russia. 1994-1995 Research Fellow, Physics Department, Montpellier , France 1997-1998 Senior researcher, Ioffe institute 1998-1998 Research , Physics Department, Lancaster University, UK 1998-1999 Senior researcher, Ioffe 1999-1999 Research , Physics Department, UK, 1999-2000 Senior researcher, Ioffe 2000-2003 Research, UK 2003-now Senior researcher, Ioffe GRANTS AND AWARDS: Victor Sherstnev joined the Department of Radio-Technical of Krasnoyarsk Polytechnic Institute (Krasnoyarsk Polytechnic Institute) in 1972 and graduated from Radio-Technical on the design and technology of radioelectronic devices of that department in 1977. He has worked at the different research positions. Dr. V. Sherstnev has published more than 120 journal papers and more than 96 conference proceedings on the studying mentioned below. Hi is an author of 2 patents. His latest research interest is the investigation of the optoelectronic devices for gas analysis. His current fields of interest are • physics and technology (LPE, MBE, MOCVD) of narrow gap III-V semiconductor heterostructures, especially nanoheterostructures (quantum wells, quantum wires, quantum dots); • physics of crystal growth of ultra-thin layers, defects in semiconductors, and semiconductor structures; • theory of electrical, optical and quantum coherent phenomena in semiconductors; • ultrafast processes and non-linear optical phenomena semiconductor laser diodes (CW, DFB), photodetectors, power semiconductor devices; • physics of power semiconductors devices (radiative recombination and non-radiative Auger recombination), • laser physics and electro-optic devices Dr. Sherstnev has essential working experience in various areas of experimental physics ranging from invention of new optoelectronic devices to realization them. • 1987 The phenomenon of the conductivity type changing for A3B5 without doping was discovered (changing the p-type conductivity to n-type). For the example of GaSb the phenomenon was demonstrated. (Have the patent). • 1992 Single frequency IR semiconductor lasers were proposed and fabricated. The fabricated lasers tuned up to the lasing mode width. In 1999 – the world record of tuning of the laser mode of single frequency semiconductor lasers was achieved up to100 А. • 1999 Proposed and fabricated of the novel class IRWGM semiconductor lasers, witch has both scientific and application importance. IRWGM semiconductor lasers open a new road for R&D. • 2003 Proposed and fabricated of the novel class Mid-Infrared lasers induced by noise. Being scientifically flexible and looking forward to new challenges Dr. Sherstnev would be willing to get engaged in other projects that appear to be interesting and potentially fruitful.
Favourite Publications: APL
